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Elemental and Structural Characterisation of Semiconductor Devices

Electron Microscopy and focused ion beam (FIB) are vital tools to fully understand semiconductor processes on the nano or even atomic scale. Read more about recent developments of analytical techniques for EM and FIB such as energy dispersive spectrometry (EDS) and electron backscatter diffraction (EBSD) which ensure that you can collect data on the device chemistry and structure that you need to understand your processes quickly and accurately. One of the challenges is that although most of the nanometre scale features can be imaged using low kV electrons, elemental analysis at this resolution and under these conditions is not typically possible.

By downloading this application note you will:

  • See how the Ultim Extreme allows high X-ray collection efficiency at the conditions required for ultra high-resolution image possible
  • Discover how EBSD and Symmetry can provide spatially resolved structural information to understand device performance

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