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Ultim Max and AZtecTEM: EDS Analysis

Ultim Max is the next generation of Silicon Drift Detectors (SDD) utilising our Extreme electronics to generate maximised sensitivity with increased throughput. This powers AZtecTEM, the market-leading software that delivers unparalleled elemental characterisation performance in the TEM.

  • Maximised sensitivity
  • Increased throughput
  • Stability at elevated temperatures
  • New drift correction methodology
  • M2T quant for sample thickness measurements
  • Watch in situ chemistry changes as they happen with AZtecLive
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Ultim Max
In situ

Extreme electronics allow high throughput. This allows it to keep counting X-rays even at high temperatures with an intense IR radiation background.

Ultim Max

Extreme electronics have very low noise. This allows accurate identification and characterisation of X-ray lines down to 72eV.


Direct measurement of specimen thickness across the sample using EDS. All from one simple single standard measurement.


Video rate electron and chemical imaging enables real-time observations and mapping of in situ chemical reactions for the first time.

Product Overview

1. Extreme Electronics

4. Excellent Low Energy Performance

7. Robust Drift Correction

2. Optimised Solid Angle

5. Improved Quantitative Accuracy

8. AZtecLive

3. Increased Take-off Angle

6. Optimised for in situ

9. Measure Specimen Thickness

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Detector Models

Ultim Max TLE, our flagship SDD detector for TEM. This detector is optimised to offer elemental characterisation at the atomic scale delivering maximum count rates at minimum probe sizes.

This performance is achieved using an optimised shape, 100 mm2 sensor, windowless construction, optimised mechanical design and extreme electronics.

  • Solid angle of 0.5 - 1.1 srad
  • Up to 8x increase in sensitivity for low energy X-rays
  • Quantitative analysis at >400,000 cps
  • Collect spectra at specimen temperatures > 1000°C during in situ experiments
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Ultim Max TEM, our SDD detector for nanoscale analysis and elemental mapping in the TEM.

Using a new low-profile 80 mm2 sensor gets closer to the specimen delivering more x-ray counts under any condition. Combined with a windowless construction and extreme electronics this detector delivers high-performance EDS for 200kV TEMs.

  • Solid angle of 0.2 - 0.6 srad
  • Up to 8x increase in sensitivity for low energy X-rays
  • Quantitative analysis at >400,000 cps
  • Collect spectra at specimen temperatures > 1000°C during in situ experiments
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Xplore TEM, our SDD detector specifically designed for routine applications in 120kV and 200kV TEM.

Using a new 80 mm2 sensor and polymer thin window and Extreme electronics this detector offers fast and accurate elemental characterisation.

  • Solid angle of 0.1 - 0.4 srad
  • Detection of elements from Be to Cf
  • Quantitative analysis at >200,000 cps
  • SATW window offers unparalleled ease of use
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Speed & Sensitivity


10 nm Au film on SiN membrane heated from 0 - 800°C showing particle agglomeration. (Sequence sped up 20x)

FIB lamella showing Al2Cu precipitation and annealing when heated from 0 - 450°C. (Sequence sped up 20x) 


An increase in both solid angle and take off angle combined with windowless detection and Extreme electronics has led to uncompromised X-ray sensitivity. This means that the Ultim Max can now detect lower X-ray energies than ever before. The combination of Extreme electronics with the X4 pulse processor also allows for in situ EDS mapping and quantification at elevated temperatures > 800­°C.


Our easy to use quant routine allows for quantification by mass thickness. This allows you to use EDS alone to weigh nanoparticles with atomic accuracy. Using this method, it is now possible to calculate the thickness of a specimen and further understand the contrast in your images.

Application Notes

Simultaneous EDS and EELS

EDS is a mature technique that can be used for most specimens. EELS is more suitable for thin samples where the thickness is less than the inelastic mean free path of electrons in the material. Simultaneous acquisition of both signals is a powerful tool for materials analysis.

Semiconductor Mapping in the TEM - Solving peak overlaps in real-time

Elemental analysis of semiconductors is typically difficult due to strong overlaps of X-ray lines between commonly used elements and low concentrations of dopants. This brief shows how AZtecTEM solves these overlaps to achieve an accurate elemental analysis.



We are renowned for delivering outstanding support. Our global service hubs offer a full range of technical support to keep your detector, system and staff at maximum efficiency.

Keep your investment at peak performance. Multi-layered maintenance contracts suit your operational needs and budget.

Optimising you. Optimising your team. Omni-channel training enables everyone to deliver the right results every time.

Our global network of help desks guarantee a fast local expert response to any application or operational issue.

Our team of accredited support professionals proactively ensure your system is in optimal condition.

We’re with you every step of the way to future proof your investment and ensure onwards data and system compatibility.

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