Resolving defects and true orientations in CIGS-type solar cells

Although electron backscattered diffraction (EBSD) is commonly used to characterise thin films, it usually lacks the angular precision to resolve individual defects or the tetragonal crystal structure of Cu(In,Ga)Se₂ (CIGS) films. This application note shows how advanced EBSD pattern matching methods using AZtecCrystal MapSweeper can be used to resolve dislocation structures, antiphase domain boundaries and the true crystallographic orientations in CIGS-type solar cells, enabling an improved understanding of their optoelectronic properties.

By downloading this application note, you will learn how:

•  Conventional EBSD analyses cannot provide the necessary microstructural data from CIGS thin films
•   AZtecCrystal MapSweeper can resolve the true tetragonal symmetry of Cu(In,Ga)Se2
•  MapSweeper improves angular precision, enabling defect and domain boundary analysis