Crystal Structure Measured with EBSD Explains Device Performance in 3D NAND Flash Memory

NAND device crystal properties were analysed in order to correlate the characteristics of nanoscale crystals with the device performance. TKD analyses permit the correlation of crystallographic nm scale properties with expected device performance characteristics in NAND devices.

By downloading this application note, you will learn how:

•  Correlation of the grain size, boundary characteristics and the crystal orientations with device performance
•  Measurement of crystallographic domains of 50 nm or less
•  Advantages of the TKD method