WDS-SEM approach for studying doping in semiconductors

SEM-based WDS approach was used to measure highly doped semiconductor layers. In this work data was acquired from a gallium nitride (GaN), p-type semiconductor material - which is essential for both GaN-based electronics and optical devices. The WDS scan clearly visually confirms the presence of the Mg Kα peak and the quantitative data obtained for the Mg concentration shows good agreement with the SIMS and EPMA values.

By downloading this application note, you will learn how:

• SEM-based WDS approach to measure doping in semiconductors
• WDS method to quantify trace level of elements
• Accurate and precise quantitative analysis using WDS