CMOS-EBSD Detector Range
Discover the market leading range of EBSD detectors based on CMOS technology: a world first in innovative technology.
C-Nano is a versatile and effective EBSD detector. The innovative technology that has helped the Symmetry S2 detector make such an impact is now implemented in the C-Nano, delivering class-leading performance at an entry level. C-Nano is suited to characterising all types of samples, but its high pixel resolution makes it ideal for detailed strain analyses as well as for routine work on complex and challenging materials.
Full 1244 x 1024 pixel resolution patterns – ideal for high resolution EBSD
Class-leading acquisition speed of 400 pps
Fibre optics delivering extreme sensitivity for low energy and low current analyses
Distortion free images
C-Nano is an EBSD detector that is designed for all types of materials and applications. Utilising a customised CMOS sensor, C-Nano delivers a top acquisition speed of 400 pps with exceptional 312 x 256 pixel resolution patterns: this makes it about 3 times faster than comparable CCD-based detectors, using patterns with at least 4 times as many pixels. The result is a performance that you can trust, with excellent data quality on even the most challenging of materials.
The fibre-optics design within C-Nano ensures superb sensitivity and sub-pixel distortion levels, making this an ideal detector for detailed strain analyses for which excellent, high definition patterns are a necessity. The sensitivity of C-Nano ensures that the maximum analysis speeds can be achieved using very low beam currents (under 3 nA), enabling detailed and successful analyses of beam-sensitive and nanocrystalline materials.
C-Nano also benefits from the new design features of the whole Oxford Instruments CMOS detector range, including the unique proximity sensor that will help to avoid unwanted and expensive collisions before they occur. This is a detector that you can trust to deliver the results you need, every time.
The C-Nano detector is your high-performance entry into CMOS technology:
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