Part of the Oxford Instruments Group


C-Swift is the newest member of our CMOS detector family designed for routine materials analysis and high throughput sample characterisation.
C-Swift benefits from many of the features that have made Symmetry S2 such a groundbreaking EBSD detector including, of course, a customised CMOS sensor designed for EBSD.

  • Guaranteed indexing speeds of 1000 pps

  • 622 x 512 pixel EBSPs at 250 pps

  • Fibre optics delivering extreme sensitivity for low energy and low current analyses

  • Distortion free images

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C-Swift is a class-leading, high throughput EBSD detector. As with the Symmetry S2 detector, C-Swift uses a customised CMOS sensor coupled with fibre optics, to deliver both speed and sensitivity, ensuring high quality results on even the most challenging materials.

C-Swift’s maximum speed of 1000 pps is achieved with good pattern resolution (156 x 128 pixels), This represents 4 times the number of pixels than is used by a comparable CCD-based detector operating at similar speeds, ensuring reliable indexing and high hit rates on all types of samples. The distortion-free optics, in partnership with the powerful indexing algorithms in the AZtec software, enables C-Swift to deliver excellent angular precision down below 0.05°. For applications that demand higher quality patterns, C-Swift can collect 622 x 512 pixel patterns at speeds up to 250 pps, making it ideal for complex multi-phase samples and detailed phase analysis.

This is a detector that has been designed for fast, effective sample characterisation. Every component of the system, from the unique proximity sensor to the optional integrated forescatter detectors, has been designed to maximise performance and ease of use, and to make EBSD a standard tool in every laboratory.

The C-Swift detector sets a new standard when speed is key:

  • Guaranteed indexing speeds of 1000 pps using only 12 nA beam current
  • Exceptional sensitivity delivered by fibre optics and an optimised phosphor screen, ensuring high quality patterns at low doses and low beam energies – resulting in maximum spatial resolution
  • 156 x 128 pixel pattern resolution at maximum speed – 4 times more pixels than a fast CCD detector at comparable speeds
  • Full resolution (622 x 512) patterns – ideal for detailed phase and deformation analyses
  • Low distortion optics, ensuring an angular precision better than 0.05°.
  • High sensitivity with an optimised phosphor screen, ensuring high quality patterns at low doses and low beam energies – resulting in maximum spatial resolution
  • Seamless EDS integration even at the highest speeds
  • Bellows SEM interface, maintaining the microscope’s vacuum integrity
  • Unique proximity sensor – detects potential collisions before they happen and automatically moves the detector to a safe position
  • Simple and intuitive detector settings, ensuring optimum results every time
  • Five integrated forescatter detectors, providing full colour complementary channelling contrast and atomic number contrast images.

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CMOS-EBSD Detector Range

Discover the market leading range of EBSD detectors based on CMOS technology: a world first in innovative technology.

Symmetry S2 

Symmetry, the world's first EBSD detector based on CMOS sensor technology, is set to revolutionise EBSD analysis.


This 16 page brochure illustrates why AZtec is the leading EBSD analysis platform on the market. Covers both hardware and software.

EBSD Explained

EBSD Explained is a 24 page tutorial that not only gives newcomers a solid foundation in the underlining science of the subject, but also shows how the theory is applied in practice to get reliable and accurate EBSD results.

Direct Observations of Phase Transformations using High Temperature EBSD

Learn about a new phosphor screen for the Oxford Instruments CMOS EBSD detector range that uses an optical interference filter to block out the infrared signal during high temperature EBSD experiments. This new technology enables faster and more sensitive analyses of microstructural changes measured in-situ at high temperatures.


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