Multi-Scale Analysis of Dislocations and Grain Boundaries for Improving mc-Si Solar Cell Performance
The use of solar cells is increasing worldwide and a wide range of semiconductor materials have been shown to be suitable for the active layers that convert sunlight into electric charge. However, defects and impurities in solar cell materials severely impact the efficiency of the product.
Production improvements are required to ensure that Mc-Si solar cells can reach their full potential. The improvements are dependent on understanding the nano scale features found within these cells. This application note reviews the methods in which these samples can be analysed on a nano and atomic scale, using electron beam induced current (EBIC).
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- Summary of established investigation methods on the nano-scale
- The use of Electron Beam Induced Current (EBIC), followed by Transmission Electron Microscopy (TEM) and Atom Probe Tomography (APT)
- Sample preparation and methodology
- Examples of lifted out lamella and identification of grain boundary recombination activity