Nanocolumn Gallium Nitride (GaN) growth control inspection

Gallium Nitride (GaN) crystal growth must be carefully optimized and controlled in order to improve its properties. Examples is showing examination of the Metalorganic vapour-phase epitaxy (MOVPE) overgrowth above an array of GaN nanotubes. GaN samples containing a high density of nano-columns can be quickly and non-destructively analysed using an Ultim Extreme EDS detector optimized for high resolution; low voltage and low current analysis.

By downloading this application note, you will learn:

• Semiconductors quality growth inspection: MOVPE overgrowth above an array of GaN nanotubes
• Ultim Extreme EDS detector applications for analysis of semiconductor material 
• Semiconductors non-destructive high resolution; low voltage and low current analysis

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