Ultim Extreme Silicon Drift Detector is a breakthrough solution for ultra high resolution FEG-SEM applications and delivers solutions beyond conventional micro- and nano-analysis.
The Ultim Extreme is a windowless 100 mm2 version of Ultim designed to maximise sensitivity and spatial resolution. It uses a radical geometry to optimise both imaging and EDS performance in ultra-high resolution FEG-SEMs while working at low kV and short working distance. With Ultim Extreme, EDS resolution approaches that of the SEM.
Ultim Extreme a breakthrough solution for ultra high resolution FEG-SEM. This unique detector for the first time enables EDS data collection at very low kV (e.g. 1-3kV) and very short working distance to provide elemental analysis under the conditions customers are using to analyse nano-materials and surfaces at the highest SEM resolution.
The latest ultra-high resolution FEG-SEMs offer new capabilities for investigating smaller nano-structures, interfaces and surfaces. However, under the conditions used, with very short working distance, very low kV and minimal beam current, to make use of new electron signal contrasts from in-lens detectors, no current EDS can provide supporting elemental characterisation. Ultim Extreme changes this, it was designed specifically to operate in this analysis regime with:
To achieve this unique geometry, the Ultim Extreme is designed with the non-circular 100 mm2 sensor and windowless configuration already successfully used in the X-MaxN 100TLE to optimise sensitivity in the TEM. In addition the detector features a new reduced footprint electron trap configuration to allow accurate quantitative analysis up to 7kV beam voltage with qualitative elemental analysis at higher energies.
Example 1: Semiconductor device
X-ray map of smartphone CPU acquired at 3kV. 38,000cps for 30 minutes - sample and data courtesy of MSSCorps.
Example 2: Sn imaging standard
X-ray mapping at 2kV of tin nano-sphere high resolution imaging standard, 6,500cps, 15 min acquisition time.
Example 3: Ni-base Superalloy
Fine Ni3(NbTi) gamma” precipitates in Alloy 718, collected at 1.5 kV, 2,000cps for 18 minutes - Sample and data courtesy of University of Manchester.
With Ultim Extreme users can characterise the composition and distribution of surface contaminants and layers a few atoms thick.
Example: X-ray Maps collected at 1kV to characterise high-end electronic component stain detected using In Lens SE imaging.
Materials characterisation at 2kV or less
Example: Reducing accelerating voltage from 10 to 1.5kV allows electron image contrast to show the distribution of oxide particles. X-ray mapping under the same conditions characterises precipitates as MnOB. Map acquisition time 15 minutes. Sample courtesy of JFE Steel.
Example: X-ray QuantMaps collected at 3kV, 15,000cps for 22 minutes to characterise NbTi Nitride and Al Oxide nano-precipitates in a Ni- base superalloy (Alloy 718). Sample and data courtesy of University of Manchester.
Most accurate nano-characterisation
Example: Spectrum processing of low energy lines to create QuantMaps to characterise NbTi Nitride and Al Oxide nano-precipitates in a Ni- base superalloy (Alloy 718)
Ultim Extreme uses a special electron trap and windowless operation to achieve the required performance to meet its target applications. Its windowless operation provides improvements in count rate of 2-3x for light elements, and nearly 1.5x for the highest lines that can be detected. In combination with the improvement in solid angle this provides a sensitivity boost of 10-30x compared to conventional large area SDD with thin windows. For extremely low energy lines the improvements is even greater and further increased by the use of extreme electronics developed for Li-detection.
Example: First detection of Lithium