STEM-EDS Analysis of Elemental Distribution in a GaN Transistor
Learn how to measure the quality of transistor components in the most efficient and cost-effective way possible using STEM-EDS analysis with TKD sample holder. Instead of performing TEM analysis, an electron transparent sample can be analysed using Ultim® Max 170 large area silicon drift detector. Results acquired in just 5 minutes are showing high spatial elemental distribution within specific device regions, with resolved peak overlaps resulting in true spatial distributions.
By downloading this application note, you will learn:
- To measure the quality of transistor components
- To skip the TEM queue and employ STEM-EDS
- Fast and cost-effective characterisation of high frequency and power GaN devices
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