As semiconductor devices continue to decrease in size to improve performance and take advantage of advances in fabrication techniques, there is a need to analyse both their structure and chemistry at ever increasing resolution. Typically this requires the use of TEM for metrology and failure analysis. Using ultra-high resolution FEG-SEM, low kV imaging and the new X-Max® Extreme EDS detector we demonstrate the ability to retain some of this high-resolution analysis in the SEM. This allows for better targeting of resources and increased throughput of analysis.
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*Please note, this application note refers to X-Max Extreme, this has since been upgraded to Ultim Extreme