Part of the Oxford Instruments Group

Mapping Semiconductor Devices in the SEM

As semiconductor devices continue to decrease in size to improve performance and take advantage of advances in fabrication techniques, there is a need to analyse both their structure and chemistry at ever increasing resolution. Typically this requires the use of TEM for metrology and failure analysis. Using ultra-high resolution FEG-SEM, low kV imaging and the new X-Max® Extreme EDS detector we demonstrate the ability to retain some of this high-resolution analysis in the SEM. This allows for better targeting of resources and increased throughput of analysis.

By downloading this application note, you will see:

  • That by using low kV SEM to analyse semiconductor materials, it can reveal information that would otherwise be indiscernible at higher kV

*Please note, this application note refers to X-Max Extreme, this has since been upgraded to Ultim Extreme

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