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Understanding the chemistry and structure of semiconductor devices at the nanoscale is critical to identify killer defects, failure processes, and to characterise and evaluate new devices. With the latest EDS and EBSD analysis tools, Oxford Instruments enables you to take electron beam characterisation of semiconductor devices beyond greyscale images to image the composition and structure of critical device components and aid the identification and root cause of critical defects. Our analysis solutions help avoid costly delays in the characterisation process, enabling quick and accurate decision making based on reliable and easy to interpret results.
Speed and accuracy are critical to making timely decisions. Beat the TEM queue by achieving high spatial resolution EDS characterisation on your FIB-SEM using Ultim® Extreme. Decrease time to data and improve decision making:
For more information on how to get more from your FIB-SEM, download our Application Note below.
Download App Note
Our EBSD detector range allows for a full structural characterisation of interconnects in two and three dimensions. Resolve structural information of Through-Silicon-Vias (TSVs) that is key to understanding device performance and examining intermetallic compounds across large areas with the Symmetry S2. EBSD Performance that is unmatched with:
On specimens that still require TEM to perform angstrom resolution imaging and elemental analysis, Ultim Max TLE is the optimum solution:
A combination of techniques is sometimes required to fully understand a system. Relate is a correlative software package optimised to work with EM, EDS, EBSD, & AFM data and images. Let electron microscopy based techniques supply structural and compositional data and combine that with surface roughness data and electrical measurements from AFM:
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